AOW29S50 500v 29a a aa a mos tm power transistor general description product summary v ds @ t j,max 600v i dm 120a r ds(on),max 0.15 w q g,typ 26.6nc e oss @ 400v 6.3 m j 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r q ja r q cs r q jc 0.35 AOW29S50 AOW29S50 65 0.5 608 -55 to 150 100 20 357 maximum junction-to-ambient a,d 300 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j parameter v/ns c/w w/ o c c thermal characteristics c/w maximum junction-to-case c junction and storage temperature range maximum case-to-sink a c/w the AOW29S50 has been fabricated using the advanced a mos tm high voltage process that is designed to deliver high levels of performance and robustness in switch ing applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability this part can be ad opted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 500 units a 6 30 gate-source voltage va 120 t c =100c pulsed drain current c continuous drain current 2.9 t c =25c i d avalanche current c 29 18 derate above 25 o c power dissipation b single pulsed avalanche energy g w 70 p d repetitive avalanche energy c mj mj t c =25c dv/dt g ds top view to-262 bottom view g d s g d s AOW29S50 rev 0: april 2012 www.aosmd.com page 1 of 6
AOW29S50 symbol min typ max units 500 - - 550 600 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.6 3.3 3.9 v - 0.13 0.15 w - 0.34 0.4 w v sd - 0.85 - v i s maximum body-diode continuous current - - 29 a i sm - - 120 a c iss - 1312 - pf c oss - 88 - pf c o(er) - 78 - pf c o(tr) - 227 - pf c rss - 2.5 - pf r g - 4.8 - w q g - 26.6 - nc q gs - 6.2 - nc q gd - 9.2 - nc t d(on) - 28 - ns t r - 39 - ns t d(off) - 103 - ns t f - 40 - ns t rr - 387 - ns i rm - 29.6 - a q rr - 7.3 - m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 a, v gs =0v, t j =150c effective output capacitance, energy related h v gs =0v, v ds =0 to 400v, f=1mhz switching parameters i dss effective output capacitance, time related i r ds(on) static drain-source on-resistance i s =14.5a,v gs =0v, t j =25c diode forward voltage input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance i f =14.5a,di/dt=100a/ m s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =14.5a, r g =25 w turn-off fall time total gate charge v gs =10v, v ds =400v, i d =14.5a gate source charge gate drain charge v gs =10v, i d =14.5a, t j =25c v ds =400v, t j =150c zero gate voltage drain current body diode reverse recovery charge i f =14.5a,di/dt=100a/ m s,v ds =400v maximum body-diode pulsed current turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time peak reverse recovery current i f =14.5a,di/dt=100a/ m s,v ds =400v v v gs =10v, i d =14.5a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c m a v ds =0v, v gs =30v v ds =500v, v gs =0v v ds =5v,i d =250 m a a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =4.5a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. rev 0: april 2012 www.aosmd.com page 2 of 6
AOW29S50 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 1000 2 4 6 8 10 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 60 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =14.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 7v rev 0: april 2012 www.aosmd.com page 3 of 6
AOW29S50 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 40 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =14.5a 1 10 100 1000 10000 0 100 200 300 400 500 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1000 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area for AOW29S50 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 2 4 6 8 10 0 100 200 300 400 500 v ds (volts) figure 10: coss stroed energy eoss(uj) e oss rev 0: april 2012 www.aosmd.com page 4 of 6
AOW29S50 typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 100 200 300 400 500 600 700 25 50 75 100 125 150 175 t case (c) figure 12: avalanche energy e as (mj) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 14: normalized maximum transient thermal imp edance for AOW29S50 (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.35c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse rev 0: april 2012 www.aosmd.com page 5 of 6
AOW29S50 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 0: april 2012 www.aosmd.com page 6 of 6
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